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| TESP5700 Vishay Semiconductors Silicon PIN Photodiode Description TESP5700 PIN photodiode is applicable to high speed data transmission specifically at low reverse voltage. Black epoxy package include side view lens and daylight filter, matched to high speed IR emitters. Features * * * * * * * * * Ultra high speed at low supply voltage Fast response times tr/tf = 10 ns High cut-off frequency fc = 35 MHz Low operating voltage VR = 2 V 16936 High sensitivity s() = 0.57 A/W Low junction capacitance High efficient side view lens Wide viewing angle = 60 Daylight filter, matched to IR emitters using p = 850 nm or p = 870 nm * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High speed data transmission specifically using low supply voltage Infrared remote control and free air data transmission systems in combination with IR emitters TSFF5200 or TSFF5400. Parts Table Part TESP5700 TESP5700 Ordering code MOQ 7500 pc Remarks Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t5s Tamb 25 C Test condition Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 215 100 - 40 to + 100 - 40 to + 100 260 350 Unit V mW C C C C K/W Document Number 81573 Rev. 1.4, 08-Mar-05 www.vishay.com 1 TESP5700 Vishay Semiconductors Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Serial Resistance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Reverse Light Current Temp. Coefficient of Ira Absolute Spectral Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time Fall Time Cut-Off Frequency VR = 2 V, RL = 50 , = 870 nm VR = 2 V, RL = 50 , = 870 nm VR = 2 V, RL = 50 , = 870 nm Test condition IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 2 V, f = 1 MHz Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm , = 870 nm 2 Symbol VF V(BR) Iro CD RS Vo TKVo Ik Ira TKIra s() s() p 0.5 tr tf fc Min 60 Typ. 0.9 1 17 40 430 - 2.6 23 Max 1.3 10 Unit V V nA pF mV mV/K A A %/K A/W A/W deg nm nm ns ns MHz Ee = 1 VR = 2 V mW/cm2, = 870 nm, 16 25 0.13 0.57 0.37 60 870 790 to 980 10 10 35 Ee = 1 mW/cm2, = 870 nm, VR = 2 V VR = 2 V, = 870 nm VR = 5 V, = 950 nm Typical Characteristics (Tamb = 25 C unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA ) 1.4 1.2 100 VR = 5 V = 950 nm 1.0 10 VR = 10 V 1 20 40 60 80 100 0.8 0.6 0 20 40 60 80 100 16931 Tamb - Ambient Temperature ( C ) 94 8409 Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 Document Number 81573 Rev. 1.4, 08-Mar-05 TESP5700 Vishay Semiconductors 1000 S ( l ) rel - Relative Spectral Sensitivity I ra - Reverse Light Current ( mA ) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 100 10 VR = 2 V l = 870 nm 1 0.1 0.01 16932 0.1 1 10 16935 850 950 1050 1150 Ee - Irradiance ( mW/cm2 ) l - Wavelength ( nm ) Figure 3. Reverse Light Current vs. Irradiance Figure 6. Relative Spectral Sensitivity vs. Wavelength 100 I ra - Reverse Light Current ( m A ) S rel - Relative Sensitivity 0 l = 870 nm 1 mW/cm2 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 10 0.1 mW/cm2 1 0.1 16933 1 10 100 94 8413 0.6 0.4 0.2 0 0.2 0.4 0.6 VR - Reverse Voltage ( V ) Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 40 CD - Diode Capacitance ( pF ) 35 30 25 20 15 10 5 0 0.1 E=0 f = 1 MHz 1.0 10.0 100.0 16934 VR - Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 81573 Rev. 1.4, 08-Mar-05 www.vishay.com 3 TESP5700 Vishay Semiconductors Package Dimensions in mm 95 1 1475 www.vishay.com 4 Document Number 81573 Rev. 1.4, 08-Mar-05 TESP5700 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81573 Rev. 1.4, 08-Mar-05 www.vishay.com 5 |
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